Integrated circuit with transistor array and layout method thereof

ABSTRACT

An integrated circuit includes a plurality of transistors. The transistors are electrically connected in series and with their respective gates tied together. The transistors are implemented within a transistor array. The transistors are electrically connected between a first reference terminal and a second reference terminal. A non-dominator part of the transistors adjacent to the first reference terminal are implemented at corner regions of the transistor array.

BACKGROUND

Integrated circuit design in the deep-submicron process (e.g., 32 nm, 20nm, 16 nm and beyond) faces some newly-discovered challenges. There areparticular bottlenecks happened on circuits incorporatingmicroelectronic components such as transistors, amplifiers and currentmirrors at deep-submicron levels. As process scaling advances further,these challenges and limitations will become more significant to theadvance process of IC manufacturing.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic diagram illustrating an integrated circuit inaccordance with some embodiments.

FIG. 2 is a schematic diagram illustrating a simulation result of arelationship between percentages of the current mismatch exceeding onestandard deviation (a) and total stage numbers of the stackedtransistors.

FIG. 3 is a schematic diagram illustrating a transistor array where thefirst transistors, the second transistor and the third transistors areimplemented in accordance with some embodiments.

FIG. 4 is a schematic diagram illustrating a relationship between acontribution of current mismatch (%) and a stage location of atransistor in series in accordance with some embodiments.

FIG. 5 is a schematic diagram illustrating an integrated circuit inaccordance with some embodiments.

FIG. 6 is a flow chart diagram illustrating a layout method inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

As integrated circuit (IC) manufacturing process scales down (e.g., 32nm, 20 nm, 16 nm or beyond), size parameters of electronic components(e.g., transistors) are limited to really small. Therefore,metal-oxide-semiconductor field-effect transistors (MOSFET) with longchannel lengths are no longer allowed in the advance process. However,MOSFET with long channel lengths are needed in some analog circuitdesign for improving their performances/characteristics, such as anoutput resistance (Rout) or a current mismatch within a current mirrorcircuit.

Plural stages of transistors (e.g., MOSFET) with small channel length insome embodiments of this disclosure are stacked together to form oneequivalent transistor with a long channel length. Reference is made toFIG. 1, which is a schematic diagram illustrating an integrated circuit100 in accordance with some embodiments. As shown in FIG. 1, theintegrated circuit 100 includes plural first transistors TA1˜TA20,plural second transistors TB1˜TB20 and plural third transistorsTC1˜TC20. In embodiments shown in FIG. 1, the integrated circuit 100 hasa structure of a current mirror circuit for demonstration.

The current mirror circuit includes two or more current mirror legs. Areference current is determined by an active device (e.g., a currentsource) on one current mirror leg. The current mirror circuit isutilized to generate current(s) with an identical magnitude (mirroredfrom the reference current) on other mirror legs. The current mirrorcircuit (e.g., the integrated circuit 100) shown in FIG. 1 includesthree current mirror legs 110, 120 and 130. A reference current Iref isdetermined by a current source A1 on the current mirror leg 130. Thecurrent mirror circuit is configured to duplicate/mirror currents withthe identical magnitude onto the current mirror legs 110 and 120, so asto drive the loads L1 and L2. In ideal cases, both of the first currentId1 through the current mirror leg 110 and the second current Id2through the current mirror leg 120 shall be equal to the referencecurrent Iref. However, due to process variations, the characteristics(e.g., channel length, device size, threshold voltage, etc) of thetransistors between different current mirror legs 110˜130 will notperfectly the same, such that a current mismatch will exist between thereference current Iref, the first current Id1 and the second currentId2.

In analog circuit operation, a current mismatch in the current mirrormajorly comes from unequal threshold voltage. The current mismatch

$\left( \frac{\Delta\; I_{D}}{I_{D}} \right)$between two current mirror legs is inversely proportional to channellength (L) of the transistor on the current mirror legs, as follows:

$\frac{\Delta\; I_{D}}{I_{D}} \approx \frac{1}{L}$

Therefore, in some cases, each current mirror leg implements onetransistor with long channel length to reduce the current mismatch.However, the transistor with long channel length is not suitable foradvance processes.

In some embodiments of this disclosure, the current mirror leg 110includes first transistors TA1˜TA20. The transistors TA1˜TA20 areelectrically connected in series between a first reference terminal anda second reference terminal and with their respective gates tiedtogether. As embodiments shown in FIG. 1, the first transistors TA1˜TA20are p-channel metal-oxide-semiconductor field-effect transistors(p-MOSFET), and the first reference terminal is a positive supplyvoltage terminal Vdd, and the second reference terminal is a systemground terminal GND. In some other embodiments, the first transistorsTA1˜TA20 are not limited to utilize the p-MOSFETs.

As shown in FIG. 1, the current mirror leg 110 includes 20 stages offirst transistors TA1, TA2, TA3 . . . and TA20. One end of the firsttransistor TA1 at the 1^(st) stage is connected to the positive supplyvoltage terminal Vdd, and another end of the first transistor TA1 isconnected to one end of the first transistor TA2 at the 2^(nd) stage.Another end of the first transistor TA2 at the 2^(nd) stage is connectedto one end of the first transistor TA3 at the 3^(rd) stage, and so on.At least, one end of the first transistor TA20 at the 20^(th) stage isconnected to one end of the first transistor TA19 at the 19^(th) stage,and another end of the first transistor TA20 at the 20^(th) stage isconnected to the system ground terminal GND. In addition, all gates offirst transistors TA1˜TA20 are controlled by a bias voltage Vbias. Basedon aforesaid connections between the first transistors TA1˜TA20, thegate-stacked first transistors TA1˜TA20 are equivalent to a singulartransistor. In some embodiments, the first transistors TA1˜TA20 withrelatively short channel lengths (e.g., 0.1 μm, each) are equivalent tothe singular transistor with a relatively long channel lengths (e.g., 2μm).

Similarly, the current mirror leg 120 includes 20 stages of the secondtransistors TB1, TB2, TB3 . . . and TB20. The second transistorsTB1˜TB20 electrically connected in series between the positive supplyvoltage terminal Vdd and the system ground terminal GND. The gates ofthe second transistors TB1˜TB20 are tied/connected together and alsocontrolled by the bias voltage Vbias. Based on the connections betweenthe second transistors TB1˜TB20, the gate-stacked second transistorsTB1˜TB20 are equivalent to a singular transistor. In some embodiments,the second transistors TB1˜TB20 with relatively short channel lengthsare equivalent to the singular transistor with a relatively long channellengths.

Similarly, the current mirror leg 130 also includes 20 stages of thethird transistors TC1, TC2, TC3 . . . and TC20. The detail of thegate-stacked structure of the current mirror leg 130 is similar to thecurrent mirror leg 110 and not repeated here.

In other words, an equivalent transistor with the long channel lengthcan be achieved by stacking plural transistors each with a specificchannel length allowed in the advance processes. Based on aforesaidgate-stacking structure, each of the current mirror leg 110, 120 or 130include the equivalent transistors with long channel lengths, such thatthe mismatch between the reference current Iref, the first current Id1and the second current Id2 will be reduced accordingly.

Reference is made to FIG. 2, which is a schematic diagram illustrating asimulation result of a relationship between percentages of the currentmismatch exceeding one standard deviation (σ) and total stage numbers ofthe stacked transistors. The simulation shown in FIG. 2 is performedunder a bias current at 20 uA for all stack gates with different stacknumber; the transistors within the current mirror keep the same area fordifferent configurations in length and width.

As shown in FIG. 2, mismatch of current-mirror is strongly correlated tothe total stage numbers of the current mirror. When the stack gatenumber is increased, the mismatch of the current mirror circuit isreduced accordingly.

In embodiments shown in FIG. 1, the integrated circuit 100 includesthree current mirror legs 110˜130, and each current mirror leg 110˜130includes 20 stages of the transistors. However, each current mirror legis not limited to include 20 stages of transistor. In some embodiments,each current mirror leg includes N stages of transistor. N is a positiveinteger. Furthermore, the integrated circuit is not limited to includethree current mirror legs. In some embodiments, the integrated circuitincludes two or more current mirror legs (depending on the amount ofloads).

In some embodiments, the first transistors TA1˜TA20, the secondtransistor TB1˜TB20 and the third transistors TC1˜TC20 are implementedwithin a transistor array. Reference is also made to FIG. 3, which is aschematic diagram illustrating a transistor array 200 where the firsttransistors TA1˜TA20, the second transistor TB1˜TB20 and the thirdtransistors TC1˜TC20 are implemented in accordance with someembodiments. As shown in FIG. 3, the transistor array 200 includes x*y(x rows *y columns) array cells A11, A12, A13 . . . and Axy, in which x,y are positive integers.

The array cells are arranged side-by-side to form a grid structure. Eachof the first transistors TA1˜TA20, the second transistor TB1˜TB20 andthe third transistors TC1˜TC20 is implemented within one of the arraycells A11˜Axy within the transistor array 200. In some embodiment, thetransistor array 200 in a rectangle shape, and there are four cornerregions CORN are located around four corners (i.e., the upper leftcorner, the upper right corner, the bottom left corner and the bottomleft corner) of the transistor array 200. Each corner region CORN coversseveral array cells on at least one column and at least one row startedfrom the corresponding corner. In embodiments shown in FIG. 3, thecorner region CORN at the upper left corner covers the array cells A11,A12, A13, A21, A22 and A23 (i.e., a sub-array consisting of 2*3 cells).

When the first transistors TA1˜TA20, the second transistor TB1˜TB20 andthe third transistors TC1˜TC20 in FIG. 1 are implemented in practicalprocesses, some manufacturing variations will existed between eachindividual transistor, such that the characteristics of the transistorswill be slightly different. When the first transistors TA1˜TA20, thesecond transistor TB1˜TB20 and the third transistors TC1˜TC20 areimplemented within the transistor array 200, the transistors implementedaround edges of the transistor array 200 will suffer more severemanufacturing variations in comparison to the transistors implementedaround the center of the transistor array 200. Especially, thetransistors implemented at the corner regions CORN will be most severeover the transistor array 200.

In some embodiments, a non-dominator part of the first transistorsTA1˜TA20, the transistor TB1˜TB20 and the third transistors TC1˜TC20 areimplemented at corner regions CORN of the transistor array 200.Reference is also made to FIG. 4, which is a schematic diagramillustrating a relationship between a contribution of current mismatch(%) and a stage location of a transistor in series in accordance withsome embodiments. As shown in FIG. 4, when a specific manufacturingvariation occurs to each of the transistors, the transistors atdifferent stages are not equally weighted for current-mirror mismatch.In simulation shown in FIG. 4, the transistors at the last four stages(e.g., the first transistor TA17˜TA20 shown in FIG. 1) in the currentmirror contribute around 72% of total mismatch. Therefore, thetransistors at the 1^(st) stage to the 16^(th) stage are relativelyconsidered as non-dominator transistor for current mismatch in thecurrent mirror circuit.

In some embodiments, the dominator part and the non-dominator part aredetermined according to how much the transistors under the manufacturingvariation contribute to relative weights for the current-mirrormismatch. The dominator part is related to the transistors which affectthe current-mirror mismatch significantly or obviously. Thenon-dominator part is related to the transistors which do not affect thecurrent-mirror mismatch or affect the current-mirror mismatch slightly.

In other words, the first transistors at the last J stages TA17˜TA20(J=4 in this example) adjacent to the system ground terminal GND areconsidered as a dominator part P2 for current mismatch. On the otherhand, another part of first transistors (e.g., the non-dominator part P1including the first transistor TA1˜TA4), which is adjacent to thepositive supply voltage terminal Vdd as embodiments shown in FIG. 1, isconsidered as non-dominator transistors for current mismatch. Thepositive supply voltage terminal Vdd is also regarded as a source siderelative to the p-MOSFET.

In order to avoid the severe manufacturing variations occur to thedominator transistors, the dominator part P2 including the firsttransistor TA17˜TA20 of the last J stages (J=4 in this example) areavoided to be implemented at the corner regions CORN of the transistorarray 200 shown in FIG. 3. In some embodiments, the dominator part P2including the first transistor TA17˜TA20 are implemented around thecenter of the transistor array 200. On the other hand, the non-dominatorpart P2 including the first transistor TA1˜TA4 of the first K stages(K=4 in this example) are implemented at the corner regions CORN of thetransistor array 200 shown in FIG. 1. In aforesaid embodiments, J and Kare equal to 4, but the disclosure is not limited thereto. J and K arepositive integer less than total stages, i.e., N.

Similarly, a part of the second transistors TB1˜TB4 at the 1^(st) stageto the 4^(th) stage adjacent to the positive supply voltage terminal Vddis the non-dominator part for affecting the mismatch between the firstcurrent Id1, the second current Id2 and the reference current Iref, incomparison to another part of second transistors TB16˜TB20 at the17^(th) stage to the 20^(th) stage adjacent to the system groundterminal GND. The second transistors TB1˜TB4 are implemented in thecorner regions CORN of the transistor array 200 along with thetransistors TA1˜TA4. In addition, the third transistors TC1˜TC4 are alsoimplemented in the corner regions CORN of the transistor array 200 alongwith the transistors TA1˜TA4 and TB1˜TB4.

Based on aforesaid embodiments, the non-dominator part of thetransistors are implemented at the regions with most manufacturingvariations, such that the whole area (e.g., every cell units) within thetransistor array 200 is utilized for implementing transistors, such thatno area within the transistor array 200 will be wasted. The integratedcircuit 100 in some embodiments implements no dummy transistor withinthe transistor array 200.

In aforesaid embodiments shown in FIG. 1, the transistors TA1˜TA20,TB1˜TB20 and TC1˜TC20 are implemented by p-channelmetal-oxide-semiconductor field-effect transistors (p-MOSFET). However,the disclosure is not limited thereto. In some other embodiments, thetransistors can be replaced by n-channel metal-oxide-semiconductorfield-effect transistors (n-MOSFET) or any equivalent transistor units.Reference is also made to FIG. 5, which is a schematic diagramillustrating an integrated circuit 300 in accordance with someembodiments.

In embodiments shown in FIG. 5, the integrated circuit 300 includesfirst transistors TA1˜TA20, second transistors TB1˜TB20 and thirdtransistor TC1˜TC20. The main difference from the integrated circuit 100shown in FIG. 1 is that, the transistors TA1˜TA20, second transistorsTB1˜TB20 and third transistor TC1˜TC20 in FIG. 5 are implemented byn-MOSFET. The first transistors TA1˜TA20 are electrically connected inseries between a first reference terminal and a second referenceterminal. In some embodiments implemented by n-MOSFET, the firstreference terminal is the system ground terminal GND, and the secondreference terminal is the positive supply voltage terminal Vdd. Thealternative designs implemented by p-MOSFET (referring to embodimentsshown in FIG. 1) and n-MOSFET (referring to embodiments shown in FIG. 5)are well known by a person in related art.

In embodiments implemented by n-MOSFET, a non-dominator part P1 of thefirst transistors TA1˜TA20 is located at the first K stages (e.g.,TA1˜TA4 at the 1^(st) stage to the 4^(th) stage) adjacent to the systemground terminal GND, which is regarded as the source side related to then-MOSFET. The non-dominator part P1, e.g., the first transistorsTA1˜TA4, are implemented at the corner regions CORN of the transistorarray 200 shown in FIG. 3. On the other hands, a dominator part P2 ofthe first transistors TA1˜TA20 is located at the last J stages (e.g.,TA17˜TA20 at the 17^(th) stage to the 20^(th) stage) adjacent to thepositive supply voltage terminal Vdd. The dominator part P2, e.g., thefirst transistors TA17˜TA20, are implemented around the center of thetransistor array 200 shown in FIG. 3.

Similarly, non-dominator parts of the second transistors TB1˜TB4 and thethird transistors TC1˜TC4 at the first K stages (e.g., 1^(st) stage to4^(th) stage) adjacent to the system ground terminal GND are implementedat the corner regions CORN. Details of connections and behaviors of theintegrated circuit 300 are substantial similar to the integrated circuit100 shown in FIG. 1 and described in aforesaid paragraphs, and notrepeated here.

Reference is also made to FIG. 6, which is a flow chart diagramillustrating a layout method 500 in accordance with some embodiments.The layout method 500 include following operations. At first, operation5501 is performed for implementing a plurality of first transistors anda plurality of second transistors. Operation 5502 is performed forconnecting the first transistors in series between a first referenceterminal and a second reference terminal (also referring to FIG. 1 orFIG. 5). Operation 5503 is performed for connecting gates of the firsttransistors together. Operation 5504 is performed for connecting thesecond transistors in series between the first reference terminal andthe second reference terminal. Operation 5505 is performed forconnecting gates of the second transistors together. Operation 5506 isperformed for arranging the first transistors and the second transistorswithin a transistor array. According to the operation 5506 in someembodiments, a non-dominator part of the first transistors and thesecond transistors adjacent to the first reference terminal are arrangedat corner regions of the transistor array (also referring to FIG. 1/FIG.5 and FIG. 3).

Based on aforesaid descriptions, multiple transistors are stacked toform an equivalent transistor with a long channel length, such that acurrent mismatch can be reduced in some embodiments. Furthermore, thenon-dominator part of the transistors are implemented at the regionswith most manufacturing variations, such that the whole area (e.g.,every cell units) within the transistor array is utilized forimplementing transistors, such that no area within the transistor arraywill be wasted. The integrated circuit in some embodiments implements nodummy transistor within the transistor array.

Some embodiments of this disclosure provide an integrated circuit, whichincludes a plurality of transistors. The transistors are electricallyconnected in series and with their respective gates tied together. Thetransistors are implemented within a transistor array. The transistorsare electrically connected between a first reference terminal and asecond reference terminal. A non-dominator part of the transistorsadjacent to the first reference terminal are implemented at cornerregions of the transistor array.

Some embodiments of this disclosure provide a current mirror circuit,which includes a first current mirror leg and a second current mirrorleg. The first current mirror leg is configured with N stages of firsttransistors electrically connected in series and with their respectivegates tied together. The second current mirror leg is configured with Nstages of second transistors electrically connected in series and withtheir respective gates tied together. The first transistors and thesecond transistors are implemented within a transistor array. The firsttransistors and the second transistors are electrically connectedbetween a first reference terminal and a second reference terminal. Thefirst transistors and the second transistors at 1^(st) to K^(th) stagesadjacent to the first reference terminal are implemented at cornerregions of the transistor array. In aforesaid embodiments, N and K arepositive integers and K<N.

Some embodiments of this disclosure provide a layout method, whichincludes following steps. A plurality of first transistors and aplurality of second transistors are implemented. The first transistorsare connected in series between a first reference terminal and a secondreference terminal. Gates of the first transistors are connectedtogether. The second transistors are connected in series between a firstreference terminal and a second reference terminal. Gates of the secondtransistors are connected together. The first transistors and the secondtransistors are arranged within a transistor array. In theseembodiments, a non-dominator part of the first transistors and thesecond transistors adjacent to the first reference terminal are arrangedat corner regions of the transistor array.

In this document, the term “coupled” may also be termed as “electricallycoupled”, and the term “connected” may be termed as “electricallyconnected”. “Coupled” and “connected” may also be used to indicate thattwo or more elements cooperate or interact with each other. It will beunderstood that, although the terms “first,” “second,” etc., may be usedherein to describe various elements, these elements should not belimited by these terms. These terms are used to distinguish one elementfrom another. For example, a first element could be termed a secondelement, and, similarly, a second element could be termed a firstelement, without departing from the scope of the embodiments. As usedherein, the term “and/or” includes any and all combinations of one ormore of the associated listed items.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit, comprising: a plurality offirst transistors electrically coupled in series and with theirrespective gates tied together, wherein each of the first transistorshas a first channel length, the first transistors are implemented withina transistor array, the first transistors are electrically coupledbetween a first reference terminal and a second reference terminal, anon-dominator part of the first transistors adjacent to the firstreference terminal are implemented at corner regions of the transistorarray, wherein the first transistors electrically coupled in series andwith their respective gates tied together are equivalent to a singulartransistor, which has a second channel length longer than the firstchannel length.
 2. The integrated circuit of claim 1, wherein the firsttransistors are p-channel metal-oxide-semiconductor field-effecttransistors.
 3. The integrated circuit of claim 1, further comprising: aplurality of second transistors electrically coupled in series and withtheir respective gates tied together, wherein the second transistors arealso implemented within the transistor array, the second transistors areelectrically coupled between the first reference terminal and the secondreference terminal, a non-dominator part of the second transistorsadjacent to the first reference terminal are also implemented at thecorner regions of the transistor array.
 4. The integrated circuit ofclaim 3, wherein each of the second transistors has a third channellength, and the second transistors electrically coupled in series andwith their respective gates tied together are equivalent to a singulartransistor, which has a fourth channel length longer than the thirdchannel length.
 5. The integrated circuit of claim 3, wherein a firstcurrent and a second current pass through the first transistors inseries and the second transistors in series respectively, a part of thefirst transistors adjacent to the first reference terminal is thenon-dominator part for affecting a mismatch between the first currentand the second current in comparison to another part of the firsttransistors adjacent to the second reference terminal.
 6. The integratedcircuit of claim 5, wherein a part of the second transistors adjacent tothe first reference terminal is the non-dominator part for affecting themismatch between the first current and the second current in comparisonto another part of the second transistors adjacent to the secondreference terminal.
 7. The integrated circuit of claim 1, wherein thetransistor array is formed in a rectangle shape, and the corner regionsare located adjacent to four corners of the transistor array.
 8. Theintegrated circuit of claim 7, wherein the first transistorselectrically coupled in series and with their respective gates tiedtogether are equivalent to a singular transistor, which has a secondchannel length longer than the first channel length.
 9. The integratedcircuit of claim 7, further comprising: a plurality of secondtransistors electrically coupled in series and with their respectivegates tied together, wherein the second transistors are also implementedwithin the transistor array, the second transistors are electricallycoupled between the first reference terminal and the second referenceterminal, a non-dominator part of the second transistors adjacent to thefirst reference terminal are also implemented at the corner regions ofthe transistor array.
 10. The integrated circuit of claim 9, whereineach of the second transistors has a third channel length, and thesecond transistors electrically coupled in series and with theirrespective gates tied together are equivalent to a singular transistor,which has a fourth channel length longer than the third channel length.11. The integrated circuit of claim 9, wherein a first current and asecond current pass through the first transistors in series and thesecond transistors in series respectively, a part of the firsttransistors adjacent to the first reference terminal is thenon-dominator part for affecting a mismatch between the first currentand the second current in comparison to another part of the firsttransistors adjacent to the second reference terminal.
 12. Theintegrated circuit of claim 11, wherein a part of the second transistorsadjacent to the first reference terminal is the non-dominator part foraffecting the mismatch between the first current and the second currentin comparison to another part of the second transistors adjacent to thesecond reference terminal.
 13. The integrated circuit of claim 1,wherein there is no dummy transistor implemented within the transistorarray.
 14. The integrated circuit of claim 13, wherein the firsttransistors electrically coupled in series and with their respectivegates tied together are equivalent to a singular transistor, which has asecond channel length longer than the first channel length.
 15. Theintegrated circuit of claim 13, wherein the transistor array is formedin a rectangle shape, and the corner regions are located adjacent tofour corners of the transistor array.
 16. The integrated circuit ofclaim 13, further comprising: a plurality of second transistorselectrically coupled in series and with their respective gates tiedtogether, wherein the second transistors are also implemented within thetransistor array, the second transistors are electrically coupledbetween the first reference terminal and the second reference terminal,a non-dominator part of the second transistors adjacent to the firstreference terminal are also implemented at the corner regions of thetransistor array.
 17. The integrated circuit of claim 16, wherein eachof the second transistors has a third channel length, and the secondtransistors electrically coupled in series and with their respectivegates tied together are equivalent to a singular transistor, which has afourth channel length longer than the third channel length.
 18. Theintegrated circuit of claim 16, wherein a first current and a secondcurrent pass through the first transistors in series and the secondtransistors in series respectively, a part of the first transistorsadjacent to the first reference terminal is the non-dominator part foraffecting a mismatch between the first current and the second current incomparison to another part of the first transistors adjacent to thesecond reference terminal.
 19. The integrated circuit of claim 18,wherein a part of the second transistors adjacent to the first referenceterminal is the non-dominator part for affecting the mismatch betweenthe first current and the second current in comparison to another partof the second transistors adjacent to the second reference terminal.